Influence of Tin sulfide (SnS) nanoparticles grown on Silicone (Si) as heterojunction

Abstract

Tin sulfide (SnS) nanoparticles have been deposited on glass and n-Si substrates  using wet chemical method The as- prepared SnS nanoparticles were characterized using XRD, As waves interact with a regular structure that the diffraction occurs. SEM  show aggregates of small nanoparticles. The optical properties were acquired from the UV-VIS absorption spectrum and results showed energy gap of allowed direct transition to be (1.8) eV,  To prepare heterojunction (p-SnS/n-Si) which include (I.V) characteristics in state of light and dark conditions for forward and reverse bias as well as calculation (C.V). the results showed the (V_bi) value in illumination is less than in the dark