Synthesis and Characterization of Indium Phosphide by Electrochemical Deposition Method

Abstract

Three samples of indium phosphide (InP) were prepared by electrochemical deposition method  on porous nickel substrates. The results of X-ray diffraction of InP showed that it crystallizes in one direction (220). There is an increase in the intensity of the diffraction peak with increasing deposition time for the prepared samples. By calculating (C-V) at a fixed frequency and drawing the relationship between the (1/C2) and (V), it was found that the slope has a negative value, indicating that the prepared samples are of the p-type,  the built-in potential (Vbi) of the samples was determined to be (1.42, 1.54, 1.66)eV.(I-V) was calculated for the samples prepared for InP at different temperatures (303,313,323)ko , the relationship between I and V showed that the current intensity increases with increasing temperatures, and the electrical resistance (R) of the samples decreases with increasing different temperatures, the activation energy (Ea) values of the samples ranged (0.14,0.07,0.06) eV at different temperatures. from the study of the thermoelectric properties, it was found that the best value of the Seebeck coefficient (S) is for the sample with a deposition time of (4h).